tse.tni-dona.u.cto'i lpioducti, 20 stern ave. springfield, new jersey 07081 u.s.a. complementary plastic silicon power transistors . . . designed for low power audio amplifier and low-current, high speed switching applications. ? high collector-emitter sustaining voltage ? vceo(sus) = 80 vdc (win) ? bd789, BD790 = 100 vdc (min) ? bd791, bd792 ? high dc current gain @ iq = 200 madc hpe = 40-250 ? low collector-emitter saturation voltage ? vce(sat) = o-5 vdc (max) @ 'c = 500 madc ? high current gain ? bandwidth product ? ft = 40 mhz (min) @ iq = 100 madc) ?maximum ratings telephone: (973) 376-2922 (212) 227-6005 bd789 bd791' pnp bd79o bd792* ?motorola preferred device rating collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous ? peak base current total power dissipation @ tq = 25c derate above 25c operating and storage junction temperature range symbol vceo vcb vebo ic ib pd wstg bd789 BD790 80 80 bd791 bd792 100 100 6.0 4.0 8.0 1.0 15 0.12 -65 to +150 unit vdc vdc vdc adc adc watts w/c c 4 ampere power transistors complementary silicon 80, 100 volts 15 watts to-2z5aa thermal characteristics characteristic thermal resistance, junction to case symbol rejc max 8.34 unit c/w ib pp. power dissipation (watts) ** co ^ o o o ro ^^ s ^^ x s \ \ ^ s v \ \b 1.2 0.8 0.4 0 o a - i o ?z. 1 20 40 140 160 60 80 100 120 i temperature ('c) nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
bd789 bd791 BD790 bd792 *electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min max unit off characteristics collector-emitter sustaining voltage (1) (ic = 10madc, lb = 0) bd789, BD790 bd791 , bd792 collector cutoff current (vce = 40 vdc, ib = 0) bd789, BD790 (vce = 50 vdc, ib = 0) bd791 , bd792 collector cutoff current (vce = 80 vd. vbe(off) = 1 -5 vdc) bd789, BD790 (vce = 1 vdc. vbe(off) = 1 -5 vdc) bd791 , bd792 (vce = 40 vdc, vbe(o(t) = 1 5 vdc, tc = 1 25c) bd789, BD790 (vce = 50 vdc, vbe(off) = 1 -5 vdc, tc = 125c) bd791 , bd792 emitter cutoff current (veb = 6.0 vdc, ic = 0) vceo(sus) 'ceo icex iebo 80 100 ? ? ? ? 100 100 1.0 1.0 0.1 0.1 1.0 vdc hadc nadc madc hadc on characteristics (1) dc current gain (1c = 200 madc, vce = 30 vdc) 0c = 1.0 adc, vce = 3.0 vdc) (ic = 4.0 adc, vce = 3- vdc) collector emitter saturation voltage (ic = 500 madc, ib = 50 madc) (lc= 1.0 adc, ib = 100 madc) (lc = 2.0 adc, ib = 200 madc) (lc = 4.0 adc, ib = 800 madc) base-emitter saturation voltage (lc = 2.0 adc, ib = 200 madc) base-emitter on voltage 0c = 200 madc, vce = 3- vdc) hfe vce(sat) vbe(sat) vbe(on) 40 20 10 5.0 ? _ ? 250 0.5 1.0 2.5 3.0 1.8 1.5 vdc vdc vdc dynamic characteristics current-gain ? bandwidth product (lc = 100 madc, vce = 10 vdc, f = 10mhz) output capacitance (vcb = 10 vdc, lc = 0, f=0.1 mhz) bd789, bd791 BD790, bd792 small-signal current gain (lc = 200 madc, vce = 10 vdc. f = 1 - khz) it cob hfe 40 _ 10 ? 50 70 ? mhz pf * indicates jedec registered data. (1) pulse test: pulse width s 300 (is, duty cycle 2.0%. ?30v h 25 us |? + 11 v -9.0v scope tr, tf 10 ns duty cycle = 1.0% rb and rc varied to obtain desired current levels dt must be fast recovery type, eg mbr340 used above ib - 100 ma msd6100 used below ib - 100 ma for pnp test circuit, reverse all polarities. bd789, 791 (npn) BD790, 792 (pnp) 5.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 ic, collector current (amp) figure 2, switching time test circuit figure 3. turn-on time
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